InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot

The effect of different quantum structures in the intrinsic region a pin junction solar cell (SC) on optical and electrical properties have been investigated. SCs with structures, such as, Stranski-Krastanov (SK) dots (QDs), well (QW), submonolayer (SML) QDs (0.25 ML, 0.5 ML 0.75 ML) quasi-monolayer (1 InAs stack, were fabricated while keeping total content same all SCs. In comparison performance, SML-QD sample delivered superior performance (Almost 23% relative efficiency improvement compared to reference SC) other devices. Moreover, coverages SML tested for optimum near 0.25 deposition was found best application. These findings present promising alternative SK-QDs as intermediate band photovoltaic applications.